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NTD4965NT4G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 68A DPAK

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 38.5W
Turn On Delay Time 12.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Ta 68A Tc
Rise Time 34.2ns
Vgs (Max) ±20V
Turn-Off Delay Time 18.9 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.39W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 14.2 ns
Continuous Drain Current (ID) 17.8A
Drain Current-Max (Abs) (ID) 68A
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
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