NTD4904NT4G Fa'amatalaga Fa'atekinolosi

MOSFET NFET IPAK 30V 79A 3.7 mOhm

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.6W
Turn On Delay Time 15.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Ta 79A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 28.7 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Height 2.38mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 3 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.4W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3052pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 17.8A
Drain Current-Max (Abs) (ID) 79A
Drain to Source Breakdown Voltage 30V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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