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NSBA115EDXV6T1G Fa'amatalaga Fa'atekinolosi

Dual PNP Bipolar Digital Transistor (BRT)

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Polarity PNP
Power Dissipation 357mW
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 100k Ω
Resistor - Emitter Base (R2) 100k Ω
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case SOT-563, SOT-666
Number of Pins 6
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Terminal Form FLAT
Current Rating -100mA
Base Part Number NSBA1*
Number of Elements 2
Element Configuration Dual
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Continuous Collector Current -100mA
Radiation Hardening No
Lead Free Lead Free
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