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NSBA113EDXV6T1 Fa'amatalaga Fa'atekinolosi

TRANS 2PNP PREBIAS 0.5W SOT563

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC -50V
Terminal Form FLAT
Current Rating -100mA
Base Part Number NSBA1*
JESD-30 Code R-PDSO-F6
Number of Elements 2
Power - Max 500mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 1k Ω
RoHS Status Non-RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2005
Part Status Obsolete
Number of Terminations 6
Terminal Finish Tin (Sn)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Emitter Base (R2) 1k Ω
Lead Free Contains Lead
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