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FGH30S130P Fa'amatalaga Fa'atekinolosi

FGH30S130P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 500W
Reach Compliance Code not_compliant
Number of Elements 1
Case Connection COLLECTOR
Power - Max 500W
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Collector Emitter Breakdown Voltage 1.3kV
Collector Emitter Saturation Voltage 1.9V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
Gate-Emitter Thr Voltage-Max 7.5V
Height 20.82mm
Width 4.82mm
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.3kV
JEDEC-95 Code TO-247AB
Voltage - Collector Emitter Breakdown (Max) 1300V
Turn On Time 413 ns
Turn Off Time-Nom (toff) 905 ns
Gate Charge 78nC
Gate-Emitter Voltage-Max 25V
Fall Time-Max (tf) 210ns
Length 15.87mm
RoHS Status ROHS3 Compliant
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