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FGH30N60LSDTU Fa'amatalaga Fa'atekinolosi

IGBT 600V 60A 480W TO247

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Case Connection COLLECTOR
Turn On Delay Time 18 ns
Transistor Application POWER CONTROL
Turn-Off Delay Time 250 ns
Max Collector Current 60A
JEDEC-95 Code TO-247AB
Collector Emitter Saturation Voltage 600V
Test Condition 400V, 30A, 6.8 Ω, 15V
Turn Off Time-Nom (toff) 2870 ns
Current - Collector Pulsed (Icm) 90A
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Thr Voltage-Max 7V
Height 20.82mm
Width 4.82mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 480W
Element Configuration Single
Input Type Standard
Power - Max 480W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 35 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Gate Charge 225nC
Td (on/off) @ 25°C 18ns/250ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 2000ns
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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