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IRFHM4231TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 25V 40A PQFN

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number IRFHM4231
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 12 ns
Threshold Voltage 1.6V
Drain-source On Resistance-Max 0.0046Ohm
Avalanche Energy Rating (Eas) 42 mJ
Length 3.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Obsolete
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Power Dissipation-Max 2.7W Ta 29W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 35μA
Current - Continuous Drain (Id) @ 25°C 40A Tc
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 5.9 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 25V
Height 900μm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
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