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IRFHM4226TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N CH 25V 28A PQFN

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TQFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Power Dissipation-Max 2.7W Ta 39W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 25V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Threshold Voltage 1.6V
Drain Current-Max (Abs) (ID) 40A
Height 900μm
Width 3.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Obsolete
Number of Terminations 5
Resistance 2.2MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 2.7W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 50μA
Current - Continuous Drain (Id) @ 25°C 28A Ta
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8.1 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 420A
Length 3.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
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