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IRF9388PBF Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 30V 12A 8-SO

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 25μA
Current - Continuous Drain (Id) @ 25°C 12A Ta
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage -30V
Length 4.9784mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Discontinued
Number of Terminations 8
Subcategory Other Transistors
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 12A, 20V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Turn-Off Delay Time 80 ns
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 96A
Radiation Hardening No
Lead Free Lead Free
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