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IRF9310TRPBF Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 30V 20A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 8
Resistance 4.6MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Rise Time 47ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) -20A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 630 mJ
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
JESD-30 Code R-PDSO-G3
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 65 ns
Threshold Voltage -1.8V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1.8 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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