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IRF8721GTRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 14A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 14A
Drain to Source Breakdown Voltage 30V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Rise Time 11ns
Vgs (Max) ±20V
Turn-Off Delay Time 8.1 ns
Gate to Source Voltage (Vgs) 20V
Height 1.4986mm
Width 3.9878mm
REACH SVHC Unknown
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