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IRF8707GTRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 30V 11A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.7 ns
Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 1.8 V
Length 4.9784mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Obsolete
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 7.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 7.3 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
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