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IRF8707PBF Fa'amatalaga Fa'atekinolosi

IRF8707PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 11.9MOhm
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 7.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 7.3 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 53 mJ
Nominal Vgs 1.8 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2007
Part Status Discontinued
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.4 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 30V
Recovery Time 18 ns
Height 1.5mm
Width 3.9878mm
REACH SVHC No SVHC
Lead Free Lead Free
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