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IRF6717MTRPBF Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 25V 38A DIRECTFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Number of Pins 5
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.8W Ta 96W Tc
Power Dissipation 96W
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 150μA
Current - Continuous Drain (Id) @ 25°C 38A Ta 200A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Avalanche Energy Rating (Eas) 290 mJ
Height 530μm
Width 5.05mm
REACH SVHC No SVHC
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric MX
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.25m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6750pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 38A
Drain Current-Max (Abs) (ID) 220A
Pulsed Drain Current-Max (IDM) 300A
Nominal Vgs 1.8 V
Length 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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