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IRF6702M2DTR1PBF Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 30V 15A DIRECTFET

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Obsolete
Number of Terminations 4
Terminal Position BOTTOM
Reach Compliance Code compliant
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 6.6m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drain Current-Max (Abs) (ID) 15A
Pulsed Drain Current-Max (IDM) 130A
Avalanche Energy Rating (Eas) 71 mJ
FET Feature Logic Level Gate
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case DirectFET™ Isometric MA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form NO LEAD
JESD-30 Code R-XBCC-N4
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 2.7W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 15A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 0.0066Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
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O vaega nei e aofia ai  'IRF67' 

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