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IPB60R060C7ATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 600V TO263-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ C7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 162W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 800μA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 35A
Pulsed Drain Current-Max (IDM) 135A
Avalanche Energy Rating (Eas) 159 mJ
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Active
Number of Terminations 2
Terminal Position SINGLE
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-263AB
Drain-source On Resistance-Max 0.06Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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