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IPB60R040C7ATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 650V 50A TO263-3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Operating Temperature -55°C~150°C TJ
Published 2014
Part Status Active
Max Operating Temperature 150°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 227W Tc
Turn On Delay Time 18.5 ns
Rds On (Max) @ Id, Vgs 40mOhm @ 24.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 81 ns
Gate to Source Voltage (Vgs) 20V
Max Junction Temperature (Tj) 150°C
Height 4.5mm
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Packaging Tape & Reel (TR)
Series CoolMOS™ C7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Number of Channels 1
Power Dissipation 227W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 1.24mA
Current - Continuous Drain (Id) @ 25°C 50A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 34mOhm
RoHS Status ROHS3 Compliant
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