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BSZ15DC02KDHXTMA1 Fa'amatalaga Fa'atekinolosi

BSZ15DC02KDHXTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2.5W
Terminal Form NO LEAD
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 2.5W
Rds On (Max) @ Id, Vgs 55m Ω @ 5.1A, 4.5V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 5.1A 3.2A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 5.1A
Pulsed Drain Current-Max (IDM) 20A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, HEXFET®
Part Status Active
Number of Terminations 5
Additional Feature AVALANHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Case Connection DRAIN
FET Type N and P-Channel Complementary
Vgs(th) (Max) @ Id 1.4V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 419pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
Continuous Drain Current (ID) 3.2A
Max Dual Supply Voltage 20V
Drain-source On Resistance-Max 0.055Ohm
Avalanche Energy Rating (Eas) 11 mJ
FET Feature Logic Level Gate, 2.5V Drive
Lead Free Lead Free
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O isi e aofia ai   "BSZ15"   vaega

O vaega nei e aofia ai  'BSZ15' 

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