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BSZ150N10LS3GATMA1 Fa'amatalaga Fa'atekinolosi

MOSFET N-Ch 100V 40A TSDSON-8

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Form NO LEAD
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15m Ω @ 20A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 40A Tc
Rise Time 4.6ns
Vgs (Max) ±20V
Threshold Voltage 1.7V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
REACH SVHC No SVHC
Lead Free Contains Lead
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.1W Ta 63W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 33μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 160A
RoHS Status ROHS3 Compliant
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