Cincon Launches 800W Regulated DC-DC Converter for Industrial Use
Innoscience Introduces High-Performance 100V, 60A Half-Bridge GaN FET
BonChip Electronics, a leading distributor of Innoscience's power semiconductor solutions, is excited to announce the availability of the ISG3202LA half-bridge GaN FET. This innovative device offers exceptional performance, efficiency, and reliability for demanding power electronics applications.
Key Features and Benefits
- High-Performance GaN FETs: Delivers high-efficiency and high-power performance with a 2.4mΩ half-bridge GaN FET and integrated gate driver.
- High-Frequency Operation: Optimized for high-frequency switching up to 5MHz, suitable for advanced power conversion topologies.
- Advanced Control and Protection: Features independent PWM inputs, a strong and smart bootstrap switch, and built-in protections for reliable operation.
- Low Power Consumption: Low quiescent current of 35μA ensures efficient operation.
- High dv/dt Immunity: Provides robust performance and optimized EMI characteristics.
- Compact Design: The LGA package with a slim 1.12mm profile enables easy PCB layout and integration.
Ideal for Demanding Applications
The ISG3202LA is well-suited for a wide range of applications:
- LLC Converters: Ideal for half-bridge, full-bridge, and synchronous rectifier (SR) configurations.
- High-Frequency Buck and Boost Converters: Provides efficient power conversion for various applications.
- Power Supplies: Supports power supplies for datacenters and automotive systems.
- Class-D Audio Amplifiers: Delivers high-quality audio amplification.
- Motor Drive Applications: Enables efficient and reliable motor control.
BonChip Electronics offers the ISG3202LA half-bridge GaN FET and a wide range of Innoscience's power semiconductor solutions, providing customers with expert technical support and fast delivery.
Fa'ailoga:
Innoscience,
ISG3202LA,
GaN FET,
half-bridge,
high-performance,
high-frequency,
power electronics
