- Oloa uma
- Discrete Semiconductors
- BJT Transistors Arrays
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RN1710JE(TE85L,F)
E tele
Min. : 1
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RN1710JE(TE85L,F) Fa'amatalaga Fa'atekinolosi
NPN X 2 BRT, Q1BSR=4.7K?, Q1BER=
Uiga Oloa | Uiga Taua |
---|---|
Category | Discrete Semiconductors / BJT Transistors Arrays |
Manufacturer | Toshiba Semiconductor and Storage |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 10 Weeks |
Package / Case | SOT-553 |
Transistor Element Material | SILICON |
Part Status | Active |
Subcategory | BIP General Purpose Small Signal |
Power - Max | 100mW |
Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector Cutoff (Max) | 100nA ICBO |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Frequency - Transition | 250MHz |
Resistor - Base (R1) | 4.7k Ω |
Uiga Oloa | Uiga Taua |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mounting Type | Surface Mount |
Surface Mount | YES |
Packaging | Tape & Reel (TR) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Elements | 2 |
Polarity/Channel Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Power Dissipation-Max (Abs) | 0.1W |
RoHS Status | RoHS Compliant |
RN1710JE(TE85L,F) Pepa
La'u mai i lalo fa'amaumauga ma fa'amaumauga gaosi mo RN1710JE(TE85L,F)
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Pepa fa'amaumauga
O isi e aofia ai "RN171" vaega
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RN1710JE(TE85L,F) tagata gaosi oloa: Toshiba Semiconductor and Storage, Bonchip fa'asoa, RN1710JE(TE85L,F) tau faasinomaga. RN1710JE(TE85L,F) tapula'a, RN1710JE(TE85L,F) Pepa fa'amaumauga PDF ma pine fa'amatalaga fa'amatalaga download.E mafai ona e fa'aogaina le RN1710JE(TE85L,F) Pluggable Connectors, DSP Datesseet PDF, su'e RN1710JE(TE85L,F) pine faʻataʻitaʻiga ma faʻataʻamilosaga faʻataʻitaʻiga ma le faʻaaogaina o le faʻaogaina o le gaioiga, RN1710JE(TE85L,F) aoaoga faaeletonika.E mafai ona e sii maia mai le Bonchip.
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Auala Va'a | ||
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