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GT10J312(Q) Fa'amatalaga Fa'atekinolosi

IGBT 600V 10A 60W TO220SM

Uiga Oloa Uiga Taua
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 600V
Test Condition 300V, 10A, 100 Ohm, 15V
Switching Energy -
Reverse Recovery Time (trr) 200ns
Packaging Tube
Operating Temperature 150°C (TJ)
Input Type Standard
Current - Collector Pulsed (Icm) 20A
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Td (on/off) @ 25°C 400ns/400ns
Supplier Device Package TO-220SM
Power - Max 60W
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
IGBT Type -
Current - Collector (Ic) (Max) 10A
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O isi e aofia ai   "GT10J"   vaega

O vaega nei e aofia ai  'GT10J' 

Vaega # Tufuga Vaega Avanoa
GT10J101 TOS Specialized Hot ICs 12388
GT10J301 TOSHIBA Specialized Hot ICs 990
GT10J303 TOS Specialized Hot ICs 472
GT10J311 Toshiba Semiconductor and Storage Specialized Hot ICs 44751
GT10J312 Toshiba Semiconductor and Storage Specialized Hot ICs 49535
GT10J321 TOS Specialized Hot ICs 1467

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GT10J312(Q) tagata gaosi oloa: Toshiba Semiconductor and Storage, Bonchip fa'asoa, GT10J312(Q) tau faasinomaga. GT10J312(Q) tapula'a, GT10J312(Q) Pepa fa'amaumauga PDF ma pine fa'amatalaga fa'amatalaga download.E mafai ona e fa'aogaina le GT10J312(Q) Pluggable Connectors, DSP Datesseet PDF, su'e GT10J312(Q) pine faʻataʻitaʻiga ma faʻataʻamilosaga faʻataʻitaʻiga ma le faʻaaogaina o le faʻaogaina o le gaioiga, GT10J312(Q) aoaoga faaeletonika.E mafai ona e sii maia mai le Bonchip.
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