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UT6JA2TCR Fa'amatalaga Fa'atekinolosi
30V PCH+PCH MIDDLE POWER MOSFET
Uiga Oloa | Uiga Taua |
---|---|
Category | Discrete Semiconductors / MOSFETs Transistors Arrays |
Manufacturer | ROHM Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 20 Weeks |
Package / Case | 6-PowerUDFN |
Transistor Element Material | SILICON |
Packaging | Cut Tape (CT) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 2 |
Operating Mode | ENHANCEMENT MODE |
Power - Max | 2W |
Transistor Application | SWITCHING |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Current - Continuous Drain (Id) @ 25°C | 4A |
Drain to Source Voltage (Vdss) | 30V |
Drain-source On Resistance-Max | 0.103Ohm |
DS Breakdown Voltage-Min | 30V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Uiga Oloa | Uiga Taua |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mounting Type | Surface Mount |
Surface Mount | YES |
Operating Temperature | -55°C~150°C TJ |
Part Status | Active |
Number of Terminations | 6 |
Terminal Form | NO LEAD |
Reach Compliance Code | not_compliant |
JESD-30 Code | S-PDSO-N6 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Case Connection | DRAIN |
FET Type | 2 P-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 70m Ω @ 4A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
Drain Current-Max (Abs) (ID) | 4A |
Pulsed Drain Current-Max (IDM) | 12A |
Avalanche Energy Rating (Eas) | 6.5 mJ |
RoHS Status | ROHS3 Compliant |
UT6JA2TCR Pepa
La'u mai i lalo fa'amaumauga ma fa'amaumauga gaosi mo UT6JA2TCR
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Pepa fa'amaumauga
O isi e aofia ai "UT6JA" vaega
O vaega nei e aofia ai 'UT6JA'
Vaega # | Tufuga | Vaega | Avanoa |
---|---|---|---|
UT6JA2TCR | LAPIS Semiconductor | Transistors - FETs, MOSFETs - Arrays | 2676 |
UT6JA3TCR | ROHM Semiconductor | MOSFETs Transistors Arrays |
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