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RTQ040P02TR Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 20V 4A TSMT6

Uiga Oloa Uiga Taua
Category RTQ040P02TR
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 6
Resistance 85MOhm
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Number of Elements 1
Power Dissipation-Max 1.25W Ta
Power Dissipation 1.25W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 60 ns
Threshold Voltage -2V
Drain Current-Max (Abs) (ID) 4A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -4A
Pin Count 6
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 1mA
Current - Continuous Drain (Id) @ 25°C 4A Ta
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
REACH SVHC No SVHC
Lead Free Lead Free
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