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QS8K13TCR Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 30V 6A TSMT8

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e2
Part Status Active
Number of Terminations 8
Terminal Finish Tin/Copper (Sn/Cu)
Max Power Dissipation 550mW
[email protected] Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-F8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 390pF @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 18A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Pin Count 8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 550mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Continuous Drain Current (ID) 6A
Drain-source On Resistance-Max 0.039Ohm
DS Breakdown Voltage-Min 30V
FET Feature Standard
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O isi e aofia ai   "QS8K1"   vaega

O vaega nei e aofia ai  'QS8K1' 

Vaega # Tufuga Vaega Avanoa
QS8K11 ROHM Specialized Hot ICs 1475
QS8K11TCR LAPIS Semiconductor Transistors - FETs, MOSFETs - Arrays 3451
QS8K11TCR ROHM Semiconductor MOSFETs Transistors Arrays
QS8K11TCR MOSFETIGBTIC LAPIS Semiconductor Specialized Hot ICs 3237
QS8K13 TCR LAPIS Semiconductor Specialized Hot ICs 5800
QS8K13TCR LAPIS Semiconductor Transistors - FETs, MOSFETs - Arrays 15235

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