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IMD10AT108 Fa'amatalaga Fa'atekinolosi

TRANS NPN/PNP PREBIAS 0.3W SMT6

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case SC-74, SOT-457
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 6
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Max Output Current 500mA
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V / 68 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
Current - Collector (Ic) (Max) 100mA 500mA
Collector Emitter Saturation Voltage 300mV
Frequency - Transition 250MHz 200MHz
hFE Min 100
Continuous Collector Current -500mA
Height 1.1mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Mounting Type Surface Mount
Number of Pins 74
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
Subcategory BIP General Purpose Small Signals
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MD10A
JESD-30 Code R-PDSO-G6
Operating Supply Voltage 50V
Polarity NPN, PNP
Power Dissipation 300mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 500mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 10k Ω, 100 Ω
Resistor - Emitter Base (R2) 10k Ω
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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