EMD2T2R Fa'amatalaga Fa'atekinolosi

TRANS NPN/PNP PREBIAS 0.15W EMT6

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 6
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin/Copper (Sn/Cu)
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 30mA
Base Part Number *MD2
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 22k Ω
Resistor - Emitter Base (R2) 22k Ω
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case SOT-563, SOT-666
Packaging Tape & Reel (TR)
JESD-609 Code e2
Part Status Active
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 6
Polarity NPN, PNP
Power Dissipation 150mW
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 56
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
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O isi e aofia ai   "EMD2T"   vaega

O vaega nei e aofia ai  'EMD2T' 

Vaega # Tufuga Vaega Avanoa
EMD2T2R LAPIS Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 8346
EMD2T2R IC LAPIS Semiconductor Specialized Hot ICs 5276

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