DTD743EETL Fa'amatalaga Fa'atekinolosi

TRANS PREBIAS NPN 150MW EMT3

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SC-75, SOT-416
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number DTD743
Number of Elements 1
Transistor Application AMPLIFIER
Transistor Type NPN - Pre-Biased
Max Collector Current 200mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 30V
Max Breakdown Voltage 30V
Resistor - Base (R1) 4.7 k Ω
Radiation Hardening No
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Max Power Dissipation 150mW
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Element Configuration Single
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 115 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 260MHz
Frequency - Transition 260MHz
Resistor - Emitter Base (R2) 4.7 k Ω
RoHS Status ROHS3 Compliant
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