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BSM300D12P2E001 Fa'amatalaga Fa'atekinolosi

MOSFET 2N-CH 1200V 300A

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 25 Weeks
Mounting Type Chassis Mount
Operating Temperature -40°C~150°C TJ
Published 2015
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 1875W
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Pulsed Drain Current-Max (IDM) 600A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case Module
Packaging Tray
Part Status Active
Number of Terminations 11
Max Power Dissipation 1.875kW
Terminal Form UNSPECIFIED
Reach Compliance Code not_compliant
JESD-30 Code R-XUFM-X11
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Vgs(th) (Max) @ Id 4V @ 68mA
Current - Continuous Drain (Id) @ 25°C 300A Tc
Continuous Drain Current (ID) 300A
DS Breakdown Voltage-Min 1200V
FET Feature Silicon Carbide (SiC)
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