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SS9012GBU Fa'amatalaga Fa'atekinolosi

SS9012GBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 179mg
Operating Temperature 150°C TJ
Published 2002
Part Status Obsolete
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 625mW
Current Rating -500mA
Number of Elements 1
Power Dissipation 625mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 112 @ 50mA 1V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Collector Emitter Saturation Voltage -180mV
Emitter Base Voltage (VEBO) -5V
Height 4.58mm
Width 3.86mm
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -20V
Terminal Position BOTTOM
Base Part Number SS9012
Element Configuration Single
Transistor Application AMPLIFIER
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 20V
Collector Base Voltage (VCBO) -40V
hFE Min 64
Length 4.58mm
Radiation Hardening No
Lead Free Lead Free
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