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SMMBT5401LT1G Fa'amatalaga Fa'atekinolosi

SMMBT5401LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form GULL WING
Base Part Number MMBT5401
Number of Elements 1
Power Dissipation 300mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 150V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Emitter Base Voltage (VEBO) 5V
Height 1.01mm
Width 1.4mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 300MHz
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 150V
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) 160V
hFE Min 60
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
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