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NVTFS4C13NWFTAG Fa'amatalaga Fa'atekinolosi

MOSFET NFET U8FL 30V 40A 9.4MOHM

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Reach Compliance Code not_compliant
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 14A
Drain Current-Max (Abs) (ID) 40A
Pulsed Drain Current-Max (IDM) 152A
Avalanche Energy Rating (Eas) 10 mJ
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 3W Ta 26W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0094Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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O vaega nei e aofia ai  'NVTFS' 

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