NVTFS4C08NTAG Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 30V 55A Automotive 8-Pin WDFN EP T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Rds On (Max) @ Id, Vgs 5.9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 17A
Drain Current-Max (Abs) (ID) 55A
Pulsed Drain Current-Max (IDM) 253A
Avalanche Energy Rating (Eas) 20 mJ
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 3.1W Ta 31W Tc
Power Dissipation 31W
FET Type N-Channel
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Ta
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0059Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
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