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NVMFS5844NLT3G Fa'amatalaga Fa'atekinolosi

MOSFET N-CH 60V 8SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 38 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 107W
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 12m Ω @ 10A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 11.2A Ta
Rise Time 25ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 247A
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~175°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Power Dissipation-Max 3.7W Ta 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 11.2A
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
Lead Free Lead Free
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