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NVB6413ANT4G Fa'amatalaga Fa'atekinolosi

MOSFET NFET D2PAK 100V 40A 30MO

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 84ns
Vgs (Max) ±20V
Turn-Off Delay Time 52 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
Rds On (Max) @ Id, Vgs 28m Ω @ 42A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 71 ns
Continuous Drain Current (ID) 42A
Drain-source On Resistance-Max 0.028Ohm
Avalanche Energy Rating (Eas) 200 mJ
Lead Free Lead Free
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