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NTTFS5116PLTWG Fa'amatalaga Fa'atekinolosi

NTTFS5116PLTWG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 3.2W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1258pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.072Ohm
Pulsed Drain Current-Max (IDM) 76A
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 5.7A
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 45 mJ
RoHS Status ROHS3 Compliant
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