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NTTFS5116PLTAG Fa'amatalaga Fa'atekinolosi

NTTFS5116PLTAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Contact Plating Tin
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 3.2W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1258pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Threshold Voltage -3V
Drain Current-Max (Abs) (ID) 20A
Pulsed Drain Current-Max (IDM) 76A
Height 750μm
Width 3.15mm
REACH SVHC No SVHC
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Resistance 52MOhm
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.7A Ta
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 45 mJ
Length 3.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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