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NTTFS4930NTWG Fa'amatalaga Fa'atekinolosi

MOSFET NFET U8FL 30V 23A 23MOHM

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
JESD-30 Code S-PDSO-F5
Power Dissipation-Max 790mW Ta 20.2W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.5A Ta 23A Tc
Rise Time 26.6ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 9.6A
Drain Current-Max (Abs) (ID) 7.2A
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 8-PowerWDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 8
Number of Elements 1
Element Configuration Single
Power Dissipation 2.06W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 476pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.6 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.03Ohm
Pulsed Drain Current-Max (IDM) 45A
RoHS Status ROHS3 Compliant
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