NTP6410ANG Fa'amatalaga Fa'atekinolosi

MOSFET NFET TO220 100V 76A 13MOH

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 188W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 76A Tc
Rise Time 170ns
Vgs (Max) ±20V
Turn-Off Delay Time 120 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 100V
Nominal Vgs 4 V
Length 10.28mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 188W
Turn On Delay Time 17 ns
Rds On (Max) @ Id, Vgs 13m Ω @ 76A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 190 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 500 mJ
Height 4.82mm
Width 15.75mm
REACH SVHC No SVHC
Lead Free Lead Free
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