NTP5864NG Fa'amatalaga Fa'atekinolosi

NTP5864NG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 107W
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 12.4m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4.6 ns
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 252A
Height 4.82mm
Width 15.75mm
RoHS Status ROHS3 Compliant
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-220-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 107W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 63A Tc
Rise Time 6.4ns
Vgs (Max) ±20V
Turn-Off Delay Time 18 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 80 mJ
Length 10.28mm
Radiation Hardening No
Lead Free Lead Free
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