NTMSD3P102R2SG Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 20V 2.34A 8-SOIC

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Voltage - Rated DC -20V
Terminal Position DUAL
Current Rating -3.05A
JESD-30 Code R-PDSO-G8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 3.05A, 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 2.34A
Drain-source On Resistance-Max 0.085Ohm
FET Feature Schottky Diode (Isolated)
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
Series FETKY™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 8
Number of Elements 1
Power Dissipation-Max 730mW Ta
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.34A Ta
Rise Time 42ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -20V
Feedback Cap-Max (Crss) 135 pF
RoHS Status RoHS Compliant
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