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NTMFS4983NFT3G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 30V 30A 8-Pin SO-FL T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 22A Ta 106A Tc
Rise Time 24.9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 10.7 ns
Continuous Drain Current (ID) 106A
Drain Current-Max (Abs) (ID) 22A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 8-PowerTDFN
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta 38W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 47.9nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Turn-Off Delay Time 28.7 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 320A
Radiation Hardening No
Lead Free Lead Free
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