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NTMFS4934NT1G Fa'amatalaga Fa'atekinolosi

MOSFET Power MOSFET 30V 147A 2m OHM

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Contact Plating Tin
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 2.72W
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17.1A Ta 147A Tc
Rise Time 36.2ns
Vgs (Max) ±20V
Turn-Off Delay Time 39.3 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.003Ohm
Height 1.1mm
Width 6.1mm
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Power Dissipation-Max 930mW Ta 69.44W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5505pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 9.4 ns
Continuous Drain Current (ID) 147A
Drain Current-Max (Abs) (ID) 17.1A
Drain to Source Breakdown Voltage 30V
Length 5.1mm
Radiation Hardening No
Lead Free Lead Free
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