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NTMFS4933NT3G Fa'amatalaga Fa'atekinolosi

MOSFET NFET SO8FL 30V 232A 1.5MO

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Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 2.74W
Turn On Delay Time 31 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Ta 210A Tc
Rise Time 33ns
Vgs (Max) ±20V
Turn-Off Delay Time 47 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Radiation Hardening No
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Power Dissipation-Max 1.06W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10930pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 62.1nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 43A
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
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