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NTMFS4845NT1G Fa'amatalaga Fa'atekinolosi

Trans MOSFET N-CH 30V 35.5A 8-Pin SO-FL T/R

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Max Output Current 115A
Max Supply Voltage 30V
Element Configuration Single
Power Dissipation 5.95W
Turn On Delay Time 20.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13.7A Ta 115A Tc
Rise Time 48.5ns
Vgs (Max) ±16V
Turn-Off Delay Time 28.9 ns
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 21 hours ago)
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Number of Elements 1
Power Dissipation-Max 890mW Ta 62.5W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 11.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 12.2 ns
Continuous Drain Current (ID) 115A
Drain-source On Resistance-Max 0.0044Ohm
Radiation Hardening No
Lead Free Lead Free
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