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NTMD6601NR2G Fa'amatalaga Fa'atekinolosi

MOSFET NFET S08D 80V 1.4A 245mOHM

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Dual
Power Dissipation 1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Continuous Drain Current (ID) 1.1A
Drain to Source Breakdown Voltage 80V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Max Power Dissipation 600mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 215m Ω @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Drain to Source Voltage (Vdss) 80V
Gate to Source Voltage (Vgs) 15V
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
Lead Free Lead Free
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