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NTMD5838NLR2G Fa'amatalaga Fa'atekinolosi

NTMD5838NLR2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

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Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 52 Weeks
Contact Plating Tin
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2.1W
Pin Count 8
Element Configuration Dual
Power Dissipation 2.1W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 40V
Turn-Off Delay Time 17 ns
Threshold Voltage 1.8V
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
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Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 785pF @ 20V
Rise Time 23ns
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 35A
FET Feature Logic Level Gate
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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