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NTLUS3A18PZTCG Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 20V 8.2A UDFN

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.1A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 88 ns
Continuous Drain Current (ID) 5.1A
Drain Current-Max (Abs) (ID) 8.2A
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case 6-UDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Pin Count 6
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Turn-Off Delay Time 150 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
RoHS Status ROHS3 Compliant
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O vaega nei e aofia ai  'NTLUS' 

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