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NTLJS3113PTAG Fa'amatalaga Fa'atekinolosi

MOSFET P-CH 20V 3.5A 6-WDFN

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 6
Resistance 40MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Number of Elements 1
Element Configuration Single
Power Dissipation 1.9W
Turn On Delay Time 6.9 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Rise Time 17.5ns
Vgs (Max) ±8V
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Radiation Hardening No
Lead Free Lead Free
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 6
Power Dissipation-Max 700mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 40m Ω @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1329pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 17.5 ns
Continuous Drain Current (ID) -5.8A
Drain Current-Max (Abs) (ID) 3.5A
Pulsed Drain Current-Max (IDM) 23A
RoHS Status RoHS Compliant
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