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NTLJD3119CTBG Fa'amatalaga Fa'atekinolosi

NTLJD3119CTBG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Uiga Oloa Uiga Taua
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Contact Plating Tin
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Subcategory Other Transistors
Peak Reflow Temperature (Cel) 260
Base Part Number NTLJD3119C
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.2 ns
Rds On (Max) @ Id, Vgs 65m Ω @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 13.2 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Nominal Vgs 700 mV
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Uiga Oloa Uiga Taua
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series µCool™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 710mW
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 710mW
FET Type N and P-Channel
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.6A 2.3A
Rise Time 13.2ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 13.7 ns
Threshold Voltage 700mV
Drain Current-Max (Abs) (ID) 3.8A
Pulsed Drain Current-Max (IDM) 18A
FET Feature Logic Level Gate
Height 750μm
Width 2mm
REACH SVHC No SVHC
Lead Free Lead Free
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O isi e aofia ai   "NTLJD"   vaega

O vaega nei e aofia ai  'NTLJD' 

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